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| PBLS4001Y; PBLS4001V 40 V PNP BISS loadswitch Rev. 03 -- 12 February 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor and NPN ResistorEquipped Transistor (RET) in one package. Table 1. Product overview Package NXP PBLS4001Y PBLS4001V SOT363 SOT666 JEITA SC-88 - Type number 1.2 Features I I I I I Low VCEsat (BISS) and resistor-equipped transistor in one package Low threshold voltage (<1 V) compared to MOSFET Low drive power required Space-saving solution Reduction of component count 1.3 Applications I I I I Supply line switches Battery charger switches High-side switches for LEDs, drivers and backlights Portable equipment 1.4 Quick reference data Table 2. Symbol VCEO IC RCEsat Quick reference data Parameter collector-emitter voltage collector current collector-emitter saturation resistance collector-emitter voltage IC = -500 mA; IB = -50 mA open base [1] Conditions open base Min - Typ 440 Max -40 -500 700 Unit V mA m TR1; PNP low VCEsat transistor TR2; NPN resistor-equipped transistor VCEO 50 V NXP Semiconductors PBLS4001Y; PBLS4001V 40 V PNP BISS loadswitch Quick reference data ...continued Parameter output current bias resistor 1 (input) bias resistor ratio Conditions Min 1.54 0.8 Typ 2.2 1 Max 100 2.86 1.2 Unit mA k Table 2. Symbol IO R1 R2/R1 [1] Pulse test: tp 300 s; 0.02. 2. Pinning information Table 3. Pin 1 2 3 4 5 6 Pinning Description emitter TR1 base TR1 output (collector) TR2 GND (emitter) TR2 input (base) TR2 collector TR1 1 2 3 001aab555 R1 R2 TR2 TR1 Simplified outline 6 5 4 Graphic symbol 6 5 4 1 2 3 sym036 3. Ordering information Table 4. Ordering information Package Name PBLS4001Y PBLS4001V SC-88 Description plastic surface-mounted package; 6 leads plastic surface-mounted package; 6 leads Version SOT363 SOT666 Type number 4. Marking Table 5. Marking codes Marking code[1] S1* K1 Type number PBLS4001Y PBLS4001V [1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China PBLS4001Y_PBLS4001V_3 (c) NXP B.V. 2009. All rights reserved. Product data sheet Rev. 03 -- 12 February 2009 2 of 11 NXP Semiconductors PBLS4001Y; PBLS4001V 40 V PNP BISS loadswitch 5. Limiting values Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VCBO VCEO VEBO IC ICM IB IBM Ptot VCBO VCEO VEBO VI Parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current peak collector current base current peak base current total power dissipation collector-base voltage collector-emitter voltage emitter-base voltage input voltage positive negative IO ICM Ptot Per device Ptot Tj Tamb Tstg [1] Conditions open emitter open base open collector single pulse; tp 1 ms single pulse; tp 1 ms Tamb 25 C open emitter open base open collector [1] Min - Max -40 -40 -6 -500 -1 -50 -100 200 50 50 10 +12 -10 100 100 200 300 150 +150 +150 Unit V V V mA A mA mA mW V V V V V mA mA mW mW C C C TR1; PNP low VCEsat transistor TR2; NPN resistor-equipped transistor output current peak collector current total power dissipation total power dissipation junction temperature ambient temperature storage temperature single pulse; tp 1 ms Tamb 25 C [1] -65 -65 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. 6. Thermal characteristics Table 7. Symbol Per device Rth(j-a) thermal resistance from junction to ambient SOT363 SOT666 [1] [2] Thermal characteristics Parameter Conditions in free air [1] [1][2] Min Typ Max Unit - - 416 416 K/W K/W Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. Reflow soldering is the only recommended soldering method. PBLS4001Y_PBLS4001V_3 (c) NXP B.V. 2009. All rights reserved. Product data sheet Rev. 03 -- 12 February 2009 3 of 11 NXP Semiconductors PBLS4001Y; PBLS4001V 40 V PNP BISS loadswitch 7. Characteristics Table 8. Characteristics Tamb = 25 C unless otherwise specified. Symbol ICBO Parameter collector-base cut-off current emitter-base cut-off current DC current gain Conditions VCB = -40 V; IE = 0 A VCB = -40 V; IE = 0 A; Tj = 150 C VEB = -5 V; IC = 0 A VCE = -2 V; IC = -10 mA VCE = -2 V; IC = -100 mA VCE = -2 V; IC = -500 mA VCEsat collector-emitter saturation voltage IC = -10 mA; IB = -0.5 mA IC = -100 mA; IB = -5 mA IC = -200 mA; IB = -10 mA IC = -500 mA; IB = -50 mA RCEsat VBEsat VBEon fT Cc collector-emitter saturation resistance base-emitter saturation voltage base-emitter turn-on voltage transition frequency collector capacitance IC = -500 mA; IB = -50 mA IC = -500 mA; IB = -50 mA VCE = -2 V; IC = -100 mA IC = -100 mA; VCE = -5 V; f = 100 MHz VCB = -10 V; IE = ie = 0 A; f = 1 MHz VCB = 50 V; IE = 0 A VCE = 30 V; IB = 0 A VCE = 30 V; IB = 0 A; Tj = 150 C VEB = 5 V; IC = 0 A VCE = 5 V; IC = 20 mA IC = 10 mA; IB = 0.5 mA VCE = 5 V; IC = 1 mA VCE = 0.3 V; IC = 20 mA [1] [1] [1] [1] Min 200 150 40 100 - Typ 440 300 - Max -100 -50 -100 -50 -130 -200 -350 700 -1.2 -1.1 10 Unit nA A nA TR1; PNP low VCEsat transistor IEBO hFE mV mV mV mV m V V MHz pF [1] [1] TR2; NPN resistor-equipped transistor ICBO ICEO collector-base cut-off current collector-emitter cut-off current emitter-base cut-off current DC current gain collector-emitter saturation voltage off-state input voltage on-state input voltage bias resistor 1 (input) bias resistor ratio collector capacitance Pulse test: tp 300 s; 0.02. (c) NXP B.V. 2009. All rights reserved. 30 2 1.54 0.8 1.2 1.6 2.2 1 - 100 1 50 2 150 0.5 2.86 1.2 2.5 nA A A mA IEBO hFE VCEsat VI(off) VI(on) R1 R2/R1 Cc [1] PBLS4001Y_PBLS4001V_3 mV V V k pF VCB = 10 V; IE = ie = 0 A; f = 1 MHz - Product data sheet Rev. 03 -- 12 February 2009 4 of 11 NXP Semiconductors PBLS4001Y; PBLS4001V 40 V PNP BISS loadswitch 600 (1) 006aaa388 hFE IB (mA) = -30 IC -27 (A) -24 -21 -0.8 -18 -0.6 -1 006aaa394 -15 -12 -9 -6 400 (2) 200 (3) -0.4 -3 -0.2 0 -10-1 -1 -10 -102 IC (mA) -103 0 0 -1 -2 -3 -4 -5 VCE (V) VCE = -2 V (1) Tamb = 100 C (2) Tamb = 25 C (3) Tamb = -55 C Tamb = 25 C Fig 1. TR1 (PNP): DC current gain as a function of collector current; typical values 006aaa389 Fig 2. TR1 (PNP): Collector current as a function of collector-emitter voltage; typical values 006aaa392 -1.1 VBE (V) -0.9 -1.1 VBEsat (V) -0.9 (1) (1) (2) -0.7 (2) -0.7 (3) (3) -0.5 -0.5 -0.3 -0.3 - 0.1 -10-1 -1 -10 -102 IC (mA) -103 -0.1 -10-1 -1 -10 -102 IC (mA) -103 VCE = -2 V (1) Tamb = -55 C (2) Tamb = 25 C (3) Tamb = 100 C IC/IB = 20 (1) Tamb = -55 C (2) Tamb = 25 C (3) Tamb = 100 C Fig 3. TR1 (PNP): Base-emitter voltage as a function of collector current; typical values Fig 4. TR1 (PNP): Base-emitter saturation voltage as a function of collector current; typical values PBLS4001Y_PBLS4001V_3 (c) NXP B.V. 2009. All rights reserved. Product data sheet Rev. 03 -- 12 February 2009 5 of 11 NXP Semiconductors PBLS4001Y; PBLS4001V 40 V PNP BISS loadswitch -1 006aaa390 -1 006aaa391 VCEsat (V) VCEsat (V) -10-1 (1) (2) (3) -10-1 (1) (2) (3) -10-2 -10-1 -1 -10 -102 -103 IC (mA) -10-2 -10-1 -1 -10 -102 -103 IC (mA) IC/IB = 20 (1) Tamb = 100 C (2) Tamb = 25 C (3) Tamb = -55 C Tamb = 25 C (1) IC/IB = 100 (2) IC/IB = 50 (3) IC/IB = 10 Fig 5. TR1 (PNP): Collector-emitter saturation voltage as a function of collector current; typical values 006aaa393 Fig 6. TR1 (PNP): Collector-emitter saturation voltage as a function of collector current; typical values 006aaa395 103 RCEsat () 102 103 RCEsat () 102 10 (1) (2) (3) 10 (1) (2) 1 1 (3) 10-1 -10-1 -1 -10 -102 IC (mA) -103 10-1 -10-1 -1 -10 -102 IC (mA) -103 IC/IB = 20 (1) Tamb = 100 C (2) Tamb = 25 C (3) Tamb = -55 C Tamb = 25 C (1) IC/IB = 100 (2) IC/IB = 50 (3) IC/IB = 10 Fig 7. TR1 (PNP): Collector-emitter saturation resistance as a function of collector current; typical values Fig 8. TR1 (PNP): Collector-emitter saturation resistance as a function of collector current; typical values PBLS4001Y_PBLS4001V_3 (c) NXP B.V. 2009. All rights reserved. Product data sheet Rev. 03 -- 12 February 2009 6 of 11 NXP Semiconductors PBLS4001Y; PBLS4001V 40 V PNP BISS loadswitch 103 hFE 006aaa015 103 006aaa014 102 (1) (2) (3) VCEsat (mV) 102 (1) (2) (3) 10 1 10-1 1 10 IC (mA) 102 10 1 10 IC (mA) 102 VCE = 5 V (1) Tamb = 150 C (2) Tamb = 25 C (3) Tamb = -40 C IC/IB = 20 (1) Tamb = 100 C (2) Tamb = 25 C (3) Tamb = -40 C Fig 9. TR2 (NPN): DC current gain as a function of collector current; typical values Fig 10. TR2 (NPN): Collector-emitter saturation voltage as a function of collector current; typical values 10 006aaa017 102 VI(on) (V) 10 006aaa016 VI(off) (V) (1) 1 (1) (2) (3) (2) (3) 1 10-1 10-1 1 10 IC (mA) 102 10-1 10-2 10-1 1 IC (mA) 10 VCE = 0.3 V (1) Tamb = -40 C (2) Tamb = 25 C (3) Tamb = 100 C VCE = 5 V (1) Tamb = -40 C (2) Tamb = 25 C (3) Tamb = 100 C Fig 11. TR2 (NPN): On-state input voltage as a function of collector current; typical values Fig 12. TR2 (NPN): Off-state input voltage as a function of collector current; typical values PBLS4001Y_PBLS4001V_3 (c) NXP B.V. 2009. All rights reserved. Product data sheet Rev. 03 -- 12 February 2009 7 of 11 NXP Semiconductors PBLS4001Y; PBLS4001V 40 V PNP BISS loadswitch 8. Package outline 2.2 1.8 6 5 4 0.45 0.15 1.1 0.8 6 1.7 1.5 5 4 0.3 0.1 0.6 0.5 2.2 1.35 2.0 1.15 pin 1 index 1.7 1.5 1.3 1.1 pin 1 index 1 0.65 1.3 Dimensions in mm 2 3 0.3 0.2 0.25 0.10 06-03-16 Dimensions in mm 1 0.5 1 2 3 0.27 0.17 0.18 0.08 04-11-08 Fig 13. Package outline SOT363 (SC-88) Fig 14. Package outline SOT666 9. Packing information Table 9. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number PBLS4001Y PBLS4001V Package SOT363 SOT666 Description 4 mm pitch, 8 mm tape and reel; T1 4 mm pitch, 8 mm tape and reel; T2 2 mm pitch, 8 mm tape and reel 4 mm pitch, 8 mm tape and reel [1] [2] [3] For further information and the availability of packing methods, see Section 12. T1: normal taping T2: reverse taping [2] [3] Packing quantity 3000 -115 -125 4000 -115 8000 -315 10000 -135 -165 - PBLS4001Y_PBLS4001V_3 (c) NXP B.V. 2009. All rights reserved. Product data sheet Rev. 03 -- 12 February 2009 8 of 11 NXP Semiconductors PBLS4001Y; PBLS4001V 40 V PNP BISS loadswitch 10. Revision history Table 10. Revision history Release date Data sheet status Product data sheet Change notice Supersedes PBLS4001Y_ PBLS4001V_2 Document ID Modifications: PBLS4001Y_PBLS4001V_3 20090212 * * * * * The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. Legal texts have been adapted to the new company name where appropriate. Figure 5: y-axis value unit amended Figure 6: y-axis value unit amended Section 11 "Legal information": updated Product data sheet Product data sheet PBLS4001Y_ PBLS4001V_1 - PBLS4001Y_PBLS4001V_2 20050425 PBLS4001Y_PBLS4001V_1 20041108 PBLS4001Y_PBLS4001V_3 (c) NXP B.V. 2009. All rights reserved. Product data sheet Rev. 03 -- 12 February 2009 9 of 11 NXP Semiconductors PBLS4001Y; PBLS4001V 40 V PNP BISS loadswitch 11. Legal information 11.1 Data sheet status Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet [1] [2] [3] Product status[3] Development Qualification Production Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. Please consult the most recently issued document before initiating or completing a design. The term `short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 11.2 Definitions Draft -- The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet -- A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications -- Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale -- NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license -- Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Quick reference data -- The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 11.3 Disclaimers General -- Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes -- NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use -- NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental 11.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 12. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com PBLS4001Y_PBLS4001V_3 (c) NXP B.V. 2009. All rights reserved. Product data sheet Rev. 03 -- 12 February 2009 10 of 11 NXP Semiconductors PBLS4001Y; PBLS4001V 40 V PNP BISS loadswitch 13. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 11.1 11.2 11.3 11.4 12 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 Packing information. . . . . . . . . . . . . . . . . . . . . . 8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 9 Legal information. . . . . . . . . . . . . . . . . . . . . . . 10 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Contact information. . . . . . . . . . . . . . . . . . . . . 10 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'. (c) NXP B.V. 2009. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 12 February 2009 Document identifier: PBLS4001Y_PBLS4001V_3 |
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